Reduced graphene oxide (RGO) has many advan-tages over graphene such as low-cost, aqueous processable and industrial-scalable. However, two main limitations that prevent the use of RGO in electronics are the highelectrical resistance and largeelectrical resistance devi-ation between fabricated devices. This limits RGO’susein biosensors, capacitors and other electronic devices.Herein, we present (1) a modified Hummer’s method to obtain large RGO flakes via in-situ size fractionationand (2) the novel growth of RGO which can bridge the gaps in-between existing RGO flakes. Together, the setwo processes reduced the electrical resistance drastical-ly from 1.99E + 06 to 4.68E + 03Ω/square and the standard deviation decreased from 80.5 % to 16.5 %.The RGO was then fabricated into a field-effect transistor biosensor. A 1 pmol to 100 nmol change in Cytochrome Cprotein corresponded to a 3 % change in electrical resistance.The reported improved RGO synthesis method and subsequent growth enable large-scale application of RGO inpractical electronic devices such as biosensors

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• Improved synthesis and growth of graphene oxide for field effect transistor biosensor