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UPA Perpustakaan Universitas Jember

Nano Watt CMOS temperature sensor

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In this paper, an ultra-low power embedded full CMOS temperature sensor based on sub-threshold MOS operation is designed in a 0.18 lm CMOS technology. It focuses on temperature measurement using the difference between the gate-source voltages of transistors operated in sub-threshold region that is proportional to absolute temperature. By using the proposed scheme the wide range supply voltage of 0.6–2.5 V with inaccuracy of ?0.55 C/ V and total power consumption of merely 7 nW at 120 C is achieved. The performance of the sensor is highly linear and the predicted temperature error is ±2 C in the range of 10–120 C. The sensor occupies a small area of 67 9 31 lm2. Ultra-low power consumption of the sensor illustrates proper operation for low power applications such as battery powered portable devices, passive RFID tags and wireless sensor network applications.

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